2N4392-E3 Vishay, 2N4392-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N4392-E3
• Description: JFET 55V 5pA
• Manufacturer: Vishay

Specifications of 2N4392-E3

• Transistor Polarity: N-Channel
• Configuration: Single
• Power Dissipation: 1800 mW
• Package / Case: TO-206AA
• Drain Source Voltage Vds: 0.4 V
• Gate-source Breakdown Voltage: - 40 V
• Gate-source Cutoff Voltage: - 2 V to - 5 V
• Drain Current (idss At Vgs=0): 25 mA to 75 mA
• Forward Transconductance Gfs (max / Min): 6 mS
• Resistance Drain-source Rds (on): 60 Ohms
• Maximum Operating Temperature: + 200 C
• Maximum Drain Gate Voltage: - 40 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Breakdown Voltage Vbr: -55V
• Gate-source Cutoff Voltage Vgs(off) Max: -5V
• Power Dissipation Pd: 1.8W
• Operating Temperature Range: -55°C To +200°C
• No. Of Pins: 3
• Channel Type: N
• Gate-source Voltage (max): -40V
• Drain-gate Voltage (max): -40V
• Operating Temperature (min): -55C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Continuous Drain Current Id: 25mA
• Rohs Compliant: Yes
• Transistor Type: JFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-4
100
200
160
120
80
60
40
20
30
24
18
12
80
40
0
0
6
0
–55
0
0
–35
I
r
D
DS
t
V
d(off)
= 1 mA
DD
t
On-Resistance and Drain Current
d(off)
changes X 0.7%/_C
V
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Temperature
–2
GS(off)
= 5 V, V
V
–15
independent of device V
2
GS(off)
r
r
I
DS
DSS
DS
– Gate-Source Cutoff Voltage (V)
@ I
@ V
Turn-Off Switching
I
T
= –8 V
D
GS(L)
5
A
D
– Drain Current (mA)
– Temperature (_C)
= 1 mA, V
–4
DS
4
= –10 V
= 20 V, V
25
t
f
45
GS
V
–6
GS(off)
GS
= 0 V
6
V
GS(off
= 0 V
GS(off)
65
I
DSS
= –2 V
)
= –2 V
85
–8
–4 V
–8 V
8
105
–10
125
_
10
200
160
120
80
40
0
100
80
60
40
20
30
24
18
12
0
5
4
3
2
1
0
6
0
1
0
0
I
T
D
t
Capacitance vs. Gate-Source Voltage
f = 1 MHz
V
d(on)
A
V
= 3 mA
DS
On-Resistance vs. Drain Current
GS(off)
t
= 25_C
V
r
GS(off)
–2
= 0 V
@
–4
V
t
V
V
= –2 V
r
GS
DD
GS(L
approximately independent of I
– Gate-Source Cutoff Voltage (V)
–4 V
–8 V
I
Turn-On Switching
D
– Gate-Source Voltage (V)
= 5 V, R
)
– Drain Current (mA)
= –10 V
–4
–8
I
D
G
t
d(on)
10
= 12 mA
= 50 W
@
–6
–12
S-04028—Rev. F, 04-Jan-01
Document Number: 70241
C
iss
C
rss
–8
–16
D
100
–10
–20