2N4392-E3 Vishay, 2N4392-E3 Datasheet - Page 3

• Manufacturer Part Number: 2N4392-E3
• Description: JFET 55V 5pA
• Manufacturer: Vishay

Specifications of 2N4392-E3

• Transistor Polarity: N-Channel
• Configuration: Single
• Power Dissipation: 1800 mW
• Package / Case: TO-206AA
• Drain Source Voltage Vds: 0.4 V
• Gate-source Breakdown Voltage: - 40 V
• Gate-source Cutoff Voltage: - 2 V to - 5 V
• Drain Current (idss At Vgs=0): 25 mA to 75 mA
• Forward Transconductance Gfs (max / Min): 6 mS
• Resistance Drain-source Rds (on): 60 Ohms
• Maximum Operating Temperature: + 200 C
• Maximum Drain Gate Voltage: - 40 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Breakdown Voltage Vbr: -55V
• Gate-source Cutoff Voltage Vgs(off) Max: -5V
• Power Dissipation Pd: 1.8W
• Operating Temperature Range: -55°C To +200°C
• No. Of Pins: 3
• Channel Type: N
• Gate-source Voltage (max): -40V
• Drain-gate Voltage (max): -40V
• Operating Temperature (min): -55C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Continuous Drain Current Id: 25mA
• Rohs Compliant: Yes
• Transistor Type: JFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
a.
b.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
Switching
Turn-On Time
Turn-Off Time
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
Parameter
Symbol
r
DS(on)
t
t
C
C
d(on)
d(off)
g
g
e
t
rss
rss
t
os
iss
iss
fs
n
r
f
_
V
f = 1 MHz
f = 1 MHz
V
V
DS
V
See Switching Circuit
See Switching Circuit
DS
DS
GS
= 0 V
= 20 V, V
V
V
= 20 V, I
= 0 V, I
V
Test Conditions
f = 1 MHz
f = 1 MHz
DS
GS(H)
DD
= 10 V, I
= 10 V
= 0 V
D
f = 1 kHz
D
GS
= 0 mA , f = 1 kHz
= 1 mA, f = 1 kHz
SST: V
= 0 V
PN: V
2N: V
SST: V
SST: V
PN: V
PN: V
2N: V
2N: V
D
= 10 mA
GS
GS
GS
GS
GS
GS
GS
GS
GS
= –12 V
= –12 V
= –5 V
= –7 V
= –5 V
= –7 V
= –12 V
= –5 V
= –7 V
2N/PN
2N/PN
2N/PN
2N/PN
SST
SST
SST
SST
SST
2N
PN
Typ
3.3
3.2
2.8
3.5
3.4
3.0
3.6
3.5
3.1
25
12
12
13
13
13
6
3
2
2
2
2
6
6
a
Min
4391
2N/PN/SST4391 Series
Max
3.5
30
14
16
15
20
15
5
5
Min
Limits
4392
Max
Vishay Siliconix
3.5
60
14
16
15
35
20
5
5
Min
4393
Max
www.vishay.com
100
3.5
14
16
15
50
30
5
5
Unit
mS
nV
mS
pF
ns
W
Hz
NCB
7-3