2SC4686A(Q) Toshiba, 2SC4686A(Q) Datasheet - Page 4

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2SC4686A(Q)

Manufacturer Part Number
2SC4686A(Q)
Description
Bipolar Small Signal NPN Transistor 220NIS1 PLS PLNN AC
Manufacturer
Toshiba
Datasheet

Specifications of 2SC4686A(Q)

Dc Collector/base Gain Hfe Min
15
Gain Bandwidth Product Ft
5.5 MHz
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SC-67
Collector- Emitter Voltage Vceo Max
1200 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
50 mA
Maximum Dc Collector Current
100 mA
Power Dissipation
10 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
500
300
100
0.5
0.3
0.1
10
50
30
10
5
3
1
5
3
1
0.1
1
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I C max (pulsed)*
I C max (continuous)
Tc = 25°C
Common emitter
Tc = 25°C
3
Collector-emitter voltage V
0.3
Collector current I
0.5
10
Safe Operating Area
300
100
30
10
0.001
3
1
DC operation
Tc = 25°C
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
1
30
f
T
V CE = 10 V
– I
C
100
5
3
V CEO max
(2SC4686)
V CEO max
(2SC4686A)
C
0.01
5
(mA)
300
CE
10
(V)
1000
100 ms*
10 ms*
1 ms*
0.1
30
Pulse width t
r
th
4
– t
1
w
w
(s)
12
10
8
6
4
2
0
0
10
20
(1)
(2)
Ambient temperature Ta (°C)
40
100
60
P
2SC4686,2SC4686A
C
(1) Tc = Ta
(2) No heat sink
80
– Ta
Infinite heat sink
(2)
(1)
100
1000
120
140
2004-07-26
160

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