2SC4686A(Q) Toshiba, 2SC4686A(Q) Datasheet

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2SC4686A(Q)

Manufacturer Part Number
2SC4686A(Q)
Description
Bipolar Small Signal NPN Transistor 220NIS1 PLS PLNN AC
Manufacturer
Toshiba
Datasheet
1.2SC4686AQ.pdf (5 pages)

Specifications of 2SC4686A(Q)

Dc Collector/base Gain Hfe Min
15
Gain Bandwidth Product Ft
5.5 MHz
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SC-67
Collector- Emitter Voltage Vceo Max
1200 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
50 mA
Maximum Dc Collector Current
100 mA
Power Dissipation
10 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TV Dynamic Focus Applications
High-Voltage Switching Applications
High-Voltage Amplifier Applications
•
•
Maximum Ratings
Electrical Characteristics
High voltage: V
Small collector output capacitance: C
Collector-base voltage
Collector-emitter
voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter
breakdown
voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Characteristics
Characteristics
CEO
2SC4686
2SC4686A
TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type
= 1200 V (max)
2SC4686
2SC4686A
DC
Pulse
Tc = 25°C
Ta = 25°C
(Tc = 25°C)
2SC4686, 2SC4686A
(Tc = 25°C)
V
V
V
V
Symbol
Symbol
ob
(BR) CBO
(BR) CEO
V
V
V
CE (sat)
BE (sat)
I
I
T
CBO
h
C
I
EBO
P
CBO
CEO
EBO
I
CP
f
I
T
stg
FE
= 2.2 pF (typ.) (V
C
B
T
ob
C
j
V
V
I
I
V
I
I
V
V
C
C
C
C
CB
EB
CE
CE
CB
−55 to 150
= 100 µA, I
= 1 mA, I
= 10 mA, I
= 10 mA, I
Rating
= 5 V, I
= 1200 V, I
= 5 V, I
= 10 V, I
= 100 V, f = 1 MHz, I
1500
1000
1200
100
150
50
25
10
5
2
1
CB
C
B
C
Test Condition
B
B
C
E
= 0
= 0
= 3 mA
= 100 V)
= 2 mA
= 2 mA
= 3 mA
= 0
E
= 0
Unit
mA
mA
°C
°C
W
V
V
V
E
= 0
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
2SC4686,2SC4686A
1500
1000
1200
Min
15
―
―
―
―
―
―
Typ.
0.16
0.7
5.5
2.2
―
―
―
―
―
―
2-10R1A
SC-67
2004-07-26
―
Max
1.0
1.5
1.5
10
60
―
―
―
―
―
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V

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2SC4686A(Q) Summary of contents

Page 1

... TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications • High voltage 1200 V (max) CEO • Small collector output capacitance: C Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage 2SC4686 Collector-emitter voltage 2SC4686A ...

Page 2

Marking C4686 Part No. (or abbreviation code) *1 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2SC4686,2SC4686A Part No. (or abbreviation code) *1 C4686 C4686A 2 Part No. 2SC4686 2SC4686A 2004-07-26 ...

Page 3

I – Common emitter Tc = 25° Collector-emitter voltage V (V) ...

Page 4

0.5 0.3 Common emitter Tc = 25°C 0.1 0.1 0.3 0 Collector current I (mA) C 300 Curves should be applied ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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