2SA1962-O(Q,T) Toshiba, 2SA1962-O(Q,T) Datasheet - Page 3

• Manufacturer Part Number: 2SA1962-O(Q,T)
• Description: Bipolar Power Transistor PNP 230V 15A
• Manufacturer: Toshiba

Specifications of 2SA1962-O(Q,T)

• Continuous Collector Current: - 15 A
• Dc Collector/base Gain Hfe Min: 35
• Gain Bandwidth Product Ft: 30 MHz
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: TO-220
• Collector- Emitter Voltage Vceo Max: - 230 V
• Emitter- Base Voltage Vebo: - 5 V
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

−0.03
−0.01
−0.05
−0.03
−0.3
−0.1
−0.5
−0.3
−0.1
−20
−16
−12
−50
−30
−10
−8
−4
−3
−1
−0.01
−5
−3
−1
0
−2
0
I C max (pulsed)*
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I C max (continuous)
Common emitter
Tc = 25°C
Tc = 25°C
Collector-emitter voltage V
Collector-emitter voltage V
−2
−10
−0.1
DC operation
Collector current I
Tc = 25°C
Tc = 100°C
Safe Operating Area
V
−30
−4
CE (sat)
I
C
– V
−1
−100
1 ms*
I B = −10 mA
CE
−800
– I
−6
25
C
C
−250
−600
Common emitter
I C /I B = 10
−400
−25
−300
−150
CE
CE
(A)
−10
V CEO max
−200
100 ms*
10 ms*
−8
−100
(V)
(V)
−50
−1000
−40
−30
−20
−100
−10
3
−20
−16
−12
300
100
−8
−4
30
10
−0.01
0
3
1
0
Common emitter
V CE = −5 V
Common emitter
V CE = −5 V
Tc = 100°C
Tc = 100°C
−0.4
Base-emitter voltage V
−0.1
Collector current I
−25
25
−0.8
I
h
C
FE
−25
– V
−1
– I
BE
−1.2
C
25
C
BE
(A)
−10
(V)
−1.6
2006-11-09
2SA1962
−100
−2.0