2SA1962-O(Q,T) Toshiba, 2SA1962-O(Q,T) Datasheet

Bipolar Power Transistor PNP 230V 15A

2SA1962-O(Q,T)

Manufacturer Part Number
2SA1962-O(Q,T)
Description
Bipolar Power Transistor PNP 230V 15A
Manufacturer
Toshiba
Datasheet

Specifications of 2SA1962-O(Q,T)

Continuous Collector Current
- 15 A
Dc Collector/base Gain Hfe Min
35
Gain Bandwidth Product Ft
30 MHz
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
TO-220
Collector- Emitter Voltage Vceo Max
- 230 V
Emitter- Base Voltage Vebo
- 5 V
Power Dissipation
130 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Amplifier Applications
Absolute Maximum Ratings
High breakdown voltage: V
Complementary to 2SC5242
Recommended for 80-W high-fidelity audio frequency amplifier
output stage.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Triple Diffused Type
CEO
= −230 V (min)
(Tc = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1962
j
−55 to 150
Rating
−230
−230
−1.5
−15
130
150
−5
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 4.7 g (typ.)
JEDEC
JEITA
TOSHIBA
2-16C1A
2006-11-09
2SA1962
Unit: mm

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2SA1962-O(Q,T) Summary of contents

Page 1

... Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2SA1962 = −230 V (min) (Tc = 25°C) Symbol Rating Unit V −230 V CBO V −230 V CEO V −5 V EBO I − −1 130 150 ° −55 to 150 °C stg 1 2SA1962 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) 2006-11-09 ...

Page 2

... V = − − ( − −0 (sat − − − − − MHz 2SA1962 Min Typ. Max Unit ― ― −5.0 μA ― ― −5.0 μA −230 ― ― ― 160 35 60 ― ― −1.5 −3.0 V ― −1.0 −1.5 V ― 30 ― MHz ― ...

Page 3

... Tc = 100°C 100 Common emitter − −100 −0.01 −1000 (V) 3 2SA1962 I – 100°C −25 −0.4 −0.8 −1.2 −1.6 −2.0 Base-emitter voltage V ( – −25 −0.1 −1 −10 −100 Collector current I ...

Page 4

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SA1962 20070701-EN 2006-11-09 ...

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