FZT1151ATA Diodes Inc, FZT1151ATA Datasheet - Page 4

• Manufacturer Part Number: FZT1151ATA
• Description: Bipolar Power PNP High Gain & Crnt
• Manufacturer: Diodes Inc

Specifications of FZT1151ATA

• Continuous Collector Current: - 3 A
• Maximum Operating Frequency: 145 MHz
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: 40V
• Power Dissipation Pd: 2.5W
• Dc Collector Current: 3A
• Dc Current Gain Hfe: 450
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE PARAMETERS
*ZETEX FZT1151A Spice model Last revision 12/12/96
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.MODEL
+
+
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The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given
and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
1995 ZETEX PLC
FZT1151A
50
40
30
20
10
0
100µs
D = 1
Transient Thermal Resistance
FZT1151A PNP IS =1.7e-12 NF =1.004 ISE=1.02e-13
NE =1.55 BF =562 VAF=26.01 IKF=3.5 NR =.97
ISC= 1.5e-13 NC =1.3 BR =38 VAR=2.41 IKR=0.3
RE =25.37e-3 RB =250e-3 RC =25e-3 CJE=440e-12
CJC=160e-12 VJC=1.058 MJC= 0.5678 TF =0.8e-9 TR =55.5e-9
t1
1ms
tP
D=t1
10ms 100ms
tP
Pulse Width
THERMAL CHARACTERISTICS
1s
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
10s
100s
4
3
2
1
0
0
T - Ambient Temperature (°C)
20
40
Derating curve
60
80
100
120
140
160