FZT1151ATA Diodes Inc, FZT1151ATA Datasheet - Page 2

• Manufacturer Part Number: FZT1151ATA
• Description: Bipolar Power PNP High Gain & Crnt
• Manufacturer: Diodes Inc

Specifications of FZT1151ATA

• Continuous Collector Current: - 3 A
• Maximum Operating Frequency: 145 MHz
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: 40V
• Power Dissipation Pd: 2.5W
• Dc Collector Current: 3A
• Dc Current Gain Hfe: 450
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
FZT1151A
V
V
V
V
V
I
I
V
V
V
h
f
C
t
t
SYMBOL
CBO
EBO
CES
T
on
off
FE
(BR)CBO
CES
CEO
CEV
(BR)EBO
CE(sat)
BE(sat)
BE(on)
cb
MIN.
-45
-40
-40
-40
-5
270
250
180
100
amb
TYP.
-95
-90
-85
-90
-8.5
-0.3
-0.3
-0.3
-60
-120
-140
-170
-200
-985
-850
450
400
300
190
145
40
170
460
45
VALUE
= 25°C).
MAX.
-100
-100
-100
-90
-180
-220
-260
-300
-1100
-1000
800
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
2%.
CONDITIONS.
I
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
V
I
V
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
CE
CB
CC
CC
=-100 A
=-100 A
=-0.1A, I
=-0.5A, I
=-1A, I
=-1.8A, I
=-3A, I
=-3A, I
=-10mA, V
=-0.5A, V
=-2A, V
=-3A, V
=-5A, V
=-50mA, V
=-2A, I
=-2A, I
=-100 A
=-10mA *
=-100 A, V
=-3A, V
=-4V
=-36V
=-10V, f=1MHz
=-30V
=-30V
=-32V
B
B
B
B
B
CE
CE
CE
=-20mA*
=-250mA*
=-250mA*
CE
=-20mA,
= 20mA,
B
B
B
CE
=-2V*
=-2V*
=-2V*
=-1.0mA*
=-5mA*
=-70mA*
=-2V*
CE
CE
=-2V*
EB
=-2V*
=-10V
=+1V