FCX1151ATA Diodes Inc, FCX1151ATA Datasheet - Page 2
![Bipolar Power PNP Low Saturation](/photos/16/6/160694/sot89_sml.jpg)
FCX1151ATA
Manufacturer Part Number
FCX1151ATA
Description
Bipolar Power PNP Low Saturation
Manufacturer
Diodes Inc
Datasheet
1.FCX1151ATA.pdf
(3 pages)
Specifications of FCX1151ATA
Continuous Collector Current
- 3 A
Maximum Operating Frequency
145 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-89
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCX1151ATA
Manufacturer:
DIODES/美台
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
FCX1151A
SYMBOL MIN.
V
V
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
on
off
FE
(BR)CBO
(BR)CES
(BR)CEO
(BR)CEV
(BR)EBO
CE(sat)
BE(sat)
BE(on)
cb
-45
-40
-40
-40
-5
270
250
180
100
amb
TYP.
-0.3
-0.3
-0.3
-60
-120
-140
-200
-985
-850
450
400
300
190
145
40
170
460
45
= 25°C unless otherwise stated).
MAX.
-100
-100
-100
-90
-180
-220
-300
-1050
-950
800
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
2%
CONDITIONS.
I
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
V
I
V
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
=-100 A
CB
EB
CE
CB
CC
CC
=-100 A
=-0.1A, I
=-0.5A, I
=-1A, I
=-3A, I
=-3A, I
=-10mA, V
=-0.5A, V
=-2A, V
=-3A, V
=-5A, V
=-50mA, V
=-2A, I
=-2A, I
=-100 A
=-10mA
=-100 A, V
=-3A, V
=-4V
=-36V
=-10V, f=1MHz
=-30V
=-30V
=-32V
B
B
B
B
B
CE
CE
CE
=-20mA*
=-250mA*
=-250mA*
=-20mA,
= 20mA,
CE
B
B
CE
=-2V*
=-2V*
=-2V*
=-1.0mA*
=-5mA*
=-2V*
CE
CE
=-2V*
EB
=-2V*
=-10V
=+1V