FCX1151ATA Diodes Inc, FCX1151ATA Datasheet
FCX1151ATA
Manufacturer Part Number
FCX1151ATA
Description
Bipolar Power PNP Low Saturation
Manufacturer
Diodes Inc
Datasheet
1.FCX1151ATA.pdf
(3 pages)
Specifications of FCX1151ATA
Continuous Collector Current
- 3 A
Maximum Operating Frequency
145 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-89
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCX1151ATA
Manufacturer:
DIODES/美台
Quantity:
20 000
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - NOVEMBER 1998
FEATURES
*
*
*
*
*
Complimentary Type -
Partmarking Detail -
ABSOLUTE MAXIMUM RATINGS.
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
**Measured under pulsed conditions. Pulse width=300 s. Duty cycle
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
2W POWER DISSIPATION
5A Peak Pulse Current
Excellent H
Extremely Low Saturation Voltage E.g. 60mv Typ.
Extremely Low Equivalent On-resistance;
R
CE(sat)
66m at 3A
tot
FE
calculated using FR4 measuring 15x15x0.6mm
Characteristics up to 5 Amps
amb
=25°C
FCX1051A
151
SYMBOL
V
V
V
I
I
I
P
T
CM
C
B
tot
j
CBO
CEO
EBO
:T
stg
-55 to +150
2%
VALUE
-500
1 †
2 ‡
-45
-40
-5
-5
-3
FCX1151A
C
B
UNIT
C
mA
W
W
°C
V
V
A
A
V
E
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FCX1151ATA Summary of contents
Page 1
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * 5A Peak Pulse Current * Excellent H Characteristics Amps FE * Extremely Low Saturation Voltage E.g. 60mv Typ. * Extremely ...
Page 2
FCX1151A ELECTRICAL CHARACTERISTICS (at T PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage ...
Page 3
TYPICAL CHARACTERISTICS 0.4 +25°C 0.3 IC/IB=50 IC/IB=100 IC/IB=200 0.2 0 10m 100m I - Collector Current ( CE(sat) C 800 VCE=2V 600 +100°C 400 +25°C -55°C 200 0 1m 10m 100m I - Collector ...