BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 8

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

NXP Semiconductors
BLF369_4
Product data sheet
Fig 10. Heatsink temperature as function of power
( C)
T
(1) t
(2) t
(3) t
(4) t
(5) t
100
h
80
60
40
20
0
0
dissipation at a duty cycle of 10 %
p
p
p
p
p
= 10 %.
= 10 ms
= 20 ms
= 50 ms
= 100 ms
2 ms
200
7.5 Ruggedness in class-AB operation
The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: 2-tone signal; V
at rated load power (P
400
Fig 12. CW heatsink temperature as function of power dissipation
600
800
001aah502
P (W)
(1)
(2)
(3)
(4)
(5)
Rev. 04 — 19 February 2009
( C)
1000
T
L(PEP)
100
h
80
60
40
20
0
100
= 500 W).
Fig 11. Heatsink temperature as function of power
300
( C)
T
(1) t
(2) t
(3) t
(4) t
(5) t
100
h
80
60
40
20
0
0
dissipation at a duty cycle of 20 %
p
p
p
p
p
= 20 %.
= 10 ms
= 20 ms
= 50 ms
= 100 ms
2 ms
Multi-use VHF power LDMOS transistor
200
500
P (W)
001aah504
400
700
600
DS
= 32 V; f = 225 MHz
© NXP B.V. 2009. All rights reserved.
800
001aah503
BLF369
P (W)
(1)
(2)
(3)
(4)
(5)
1000
8 of 17