NE3210S01 CEL, NE3210S01 Datasheet - Page 6

• Manufacturer Part Number: NE3210S01
• Description: RF GaAs Super Lo Noise HJFET
• Manufacturer: CEL

Specifications of NE3210S01

• Drain Source Voltage Vds: 2 V
• Gate-source Cutoff Voltage: 2 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL SCATTERING PARAMETERS
Note:
1. Gain Calculation:
NE3210S01
V
D
MAG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
FREQUENCY
= 2 V, I
GHz
10.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
21.00
22.00
23.00
24.00
25.00
26.00
26.50
11.00
0.10
0.20
0.30
0.40
0.50
0.70
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
|S
|S
-j10
0
21
12
j10
D
|
|
= 20 mA
(
K ±
10
-j25
j25
1.001
1.000
1.000
0.998
0.995
0.991
0.986
0.974
0.956
0.934
0.908
0.878
0.845
0.777
0.709
0.630
0.513
0.420
0.342
0.334
0.340
0.368
0.412
0.485
0.560
0.638
0.709
0.755
0.787
0.807
0.837
0.852
0.846
0.849
0.840
0.835
MAG
K - 1
2
25
S
).
50
11
j50
-j50
When K ≤ 1, MAG is undefined and MSG values are used. MSG =
-136.22
-159.96
-117.65
100
170.90
141.32
115.91
ANG
-17.98
-24.42
-30.87
-37.20
-43.32
-49.17
-60.41
-70.94
-84.63
-99.19
-11.99
98.43
84.46
73.45
63.12
54.05
47.82
44.84
40.34
35.93
31.86
26.10
25.54
26.02
-1.35
-2.51
-3.69
-4.98
-5.88
-8.15
S
26.5 GHz
22
S
0.1 GHz
22
j100
-j100
S
26.5 GHz
11
6.350
6.337
6.331
6.330
6.237
6.225
6.204
6.159
6.120
6.063
5.992
5.895
5.779
5.554
5.407
5.307
5.065
4.867
4.607
4.577
4.426
4.158
3.825
3.540
3.281
3.045
2.727
2.418
2.146
1.962
1.815
1.686
1.548
1.488
1.467
1.446
MAG
S
0.1 GHz
0
11
S
21
-109.02
-126.33
-134.00
-139.10
-118.22
178.44
177.12
175.80
174.36
172.35
169.31
164.85
157.43
150.06
142.74
135.43
128.25
121.34
108.25
-23.59
-35.66
-48.59
-61.63
-72.63
-82.09
-89.92
-98.91
ANG
-11.53
95.77
82.35
68.31
54.88
43.14
30.55
15.93
Coordinates in Ohms
V
1.81
Frequency in GHz
(T
D
A
=
= 25°C)
2 V, I
D
0.001
0.002
0.004
0.005
0.006
0.008
0.011
0.017
0.022
0.028
0.033
0.037
0.042
0.049
0.054
0.063
0.067
0.074
0.077
0.090
0.102
0.110
0.114
0.117
0.117
0.118
0.116
0.113
0.108
0.107
0.107
0.105
0.102
0.099
0.101
0.099
MAG
= 20 mA
S
12
100.26
ANG
-15.36
-21.73
-28.19
-35.54
-41.78
-46.06
-49.01
-54.84
-61.41
-66.55
-70.76
-72.25
-74.52
90.28
87.69
87.54
86.52
84.90
82.77
79.05
75.64
71.93
67.90
63.92
59.78
52.66
47.49
40.74
32.02
25.26
21.16
17.65
-8.01
9.26
0.21
180˚
|S
|S
-150˚
150˚
21
12
|
|
S
0.1 GHz
, K = 1 + | ∆ | - |S
21
-120˚
120˚
0.592
0.589
0.589
0.590
0.594
0.594
0.591
0.584
0.575
0.564
0.551
0.536
0.521
0.491
0.464
0.417
0.342
0.284
0.239
0.210
0.146
0.090
0.112
0.177
0.242
0.327
0.419
0.496
0.543
0.573
0.614
0.648
0.675
0.677
0.655
0.660
MAG
S
26.5 GHz
21
2 |S
S
22
-90˚
2
90˚
-161.41
-113.66
135.76
108.58
S
26.5 GHz
12
-12.82
-16.80
-20.81
-24.92
-28.84
-32.40
-38.43
-44.02
-51.35
-57.35
-66.38
-72.34
-88.57
ANG
93.80
83.95
67.89
53.81
40.16
34.52
74.18
62.26
57.59
49.53
46.40
46.14
12
-0.73
-1.97
-2.99
-3.85
-4.39
-6.19
-8.54
S
11
21
| - |S
2
|
-60˚
60˚
22
|
S
0.1 GHz
2
12
,
-0.17
-0.01
-30˚
30˚
∆ = S
0.01
0.05
0.11
0.15
0.19
0.24
0.31
0.38
0.45
0.53
0.61
0.76
0.88
0.96
1.16
1.25
1.34
1.21
1.14
1.13
1.16
1.14
1.11
1.04
0.98
0.94
0.92
0.88
0.77
0.67
0.64
0.59
0.62
0.63
K
0˚
11
S
22
- S
36.97
34.46
32.52
31.37
30.44
28.93
27.38
25.64
24.38
23.41
22.62
21.97
21.43
20.57
19.97
19.23
16.31
15.21
14.25
14.32
14.09
13.54
12.85
12.57
12.45
12.92
13.70
13.32
12.99
12.63
12.29
12.07
MAG
11.83
11.77
11.62
11.63
(dB)
21
S
12
1