NE3210S01 CEL, NE3210S01 Datasheet - Page 3

• Manufacturer Part Number: NE3210S01
• Description: RF GaAs Super Lo Noise HJFET
• Manufacturer: CEL

Specifications of NE3210S01

• Drain Source Voltage Vds: 2 V
• Gate-source Cutoff Voltage: 2 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
250
200
150
100
1.0
0.5
60
50
40
30
20
10
50
0
0
0
1
NOISE FIGURE & ASSOCIATED
TOTAL POWER DISSIPATION vs.
DRAIN TO SOURCE VOLTAGE
0.5
Drain to Source Voltage, V
Ambient Temperature, T
AMBIENT TEMPERATURE
GAIN vs. FREQUENCY
50
2
DRAIN CURRENT vs.
1.0
NF
Frequency, f (GHz)
G
A
1.5
100
4
2.0
6
150
8 10
2.5
V
GS
3.0
A
14
= 0.00 V
DS
V
I
200
0.45 V
(°C)
D
DS
0.54 V
0.90 V
0.36 V
= 10 mA
0.18 V
(V)
0.27 V
3.5
= 2 V
20
250
4.0
30
24
20
16
12
8
4
(T
A
= 25°C)
2.0
1.5
1.0
0.5
24
20
16
12
60
50
40
30
20
10
8
4
0
0
-1.20
MAXIMUM AVAILABLE GAIN, FORWARD
1
INSERTION GAIN vs. FREQUENCY
NOISE FIGURE and ASSOCIATED
V
f = 12 GHz
DS
Gate to Source Voltage, V
-1.0
GATE TO SOURCE VOLTAGE
GAIN vs. DRAIN CURRENT
= 2 V
2
DRAIN CURRENT vs.
Drain Current, I
|S
-0.8
MSG.
Frequency, f (GHz)
21S
10
|
2
-0.6
4
NF
6
-0.4
G
8 10
A
D
20
(mA)
-0.2
MAG.
GS
14
V
I
D
DS
= 10 mA
(V)
0
= 2 V
20
0.2
30
30
15
14
13
12
11
100
85
70
45
30
15
0