FZ600R12KE3 Infineon Technologies, FZ600R12KE3 Datasheet - Page 3

• Manufacturer Part Number: FZ600R12KE3
• Description: IGBT Modules 1200V 600A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ600R12KE3

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 900 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 2800 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Dc Collector Current: 900A
• Collector Emitter Voltage Vces: 2.15V
• Power Dissipation Pd: 2.8kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Ic (max): 600.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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