BSM200GAL120DN2 Infineon Technologies, BSM200GAL120DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM200GAL120DN2
• Description: IGBT Modules 1200V 200A GAL CH
• Manufacturer: Infineon Technologies

Specifications of BSM200GAL120DN2

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 290 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.4 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: HB 200GAL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 200 GAL 120 DN2
Electrical Characteristics, at T
Parameter
Chopper Diode
Chopper diode forward voltage
I
I
Reverse recovery time, chopper
I
di
Reverse recovery charge, chopper
I
di
T
T
FC
FC
FC
FC
j
j
F
F
= 25 °C
= 125 °C
/dt = -2500 A/µs, T
/dt = -2500 A/µs
= 300 A, V
= 300 A, V
= 300 A, V
= 300 A, V
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
j
= 25 °C
j
j
= 25 °C
= 125 °C
GE
GE
= 0 V
= 0 V
j
= 25 °C, unless otherwise specified
4
Symbol
V
t
Q
rrC
FC
rrC
min.
-
-
-
-
-
Values
typ.
2
1.8
500
14
40
max.
-
-
-
-
2.5
Aug-02-2004
Unit
V
ns
µC