FP40R12KE3 Infineon Technologies, FP40R12KE3 Datasheet - Page 5

• Manufacturer Part Number: FP40R12KE3
• Description: IGBT Modules 1200V 40A PIM
• Manufacturer: Infineon Technologies

Specifications of FP40R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.3 V
• Continuous Collector Current At 25 C: 55 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 55A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Packages: AG-ECONO2-1
• Ic (max): 40.0 A
• Vce(sat) (typ): 1.8 V
• Technology: IGBT3
• Housing: EconoPIM™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
0
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
0,5
0,5
1
1
Vge=19V
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
Tvj = 25°C
Tvj = 125°C
1,5
1,5
FP40R12KE3
2
V
2
V
CE
CE
5(11)
[V]
[V]
2,5
2,5
3
3
I
V
C
GE
T
I
= f (V
C
vj
= 15 V
= 125°C
= f (V
3,5
3,5
CE
CE
)
)
4
4
4,5
4,5
DB-PIM-IGBT3_2Serie.xls
5
5