PUMD2,115 NXP Semiconductors, PUMD2,115 Datasheet - Page 14

• Manufacturer Part Number: PUMD2,115
• Description: Digital Transistors / Resistor Biased TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PUMD2,115

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Frequency - Transition: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934049950115 PUMD2 T/R

NXP Semiconductors
11. Revision history
Table 10.
PEMD2_PIMD2_PUMD2_7
Product data sheet
Document ID
PEMD2_PIMD2_PUMD2_7
Modifications:
PEMD2_PIMD2_PUMD2_6
Revision history
Release date
20080924
20040421
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 8
Figure
Section 12 “Legal
1, 2, 3, 4, 5, 6, 7, 8,
“Characteristics”: V
Rev. 07 — 24 September 2008
NPN/PNP resistor-equipped transistors; R1 = 22 k , R2 = 22 k
Data sheet status
Product data sheet
Product specification
information”: updated
CEsat
9
and 10: added
unit corrected
PEMD2; PIMD2; PUMD2
Change notice
-
-
Supersedes
PEMD2_PIMD2_PUMD2_6
PEMD2_PIMD2_PUMD2_5
© NXP B.V. 2008. All rights reserved.
14 of 16