IDT05S60C Infineon Technologies, IDT05S60C Datasheet - Page 4

• Manufacturer Part Number: IDT05S60C
• Description: Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
• Manufacturer: Infineon Technologies

Specifications of IDT05S60C

• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 5 A
• Max Surge Current: 42 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 70 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 5.0 A
• Qc (typ): 12.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT05S60CXK

Rev. 2.0
5 Typ. forward power dissipation vs.
average forward current
P
7 Transient thermal impedance
Z
parameter: D =t
thJC
F,AV
=f(t
30
25
20
15
10
10
10
=f(I
10
10
5
0
-1
-2
1
0
0
10
p
F
)
), T
0.01
-5
0.1
0.05
0.5
0.02
single pulse
0.2
C
=100 °C, parameter: D =t
2
p
10
/T
-4
0.1
0.2
4
10
I
-3
F(AV)
t
p
6
[s]
0.5
[A]
10
-2
8
p
1
/T
10
10
-1
10
page 4
12
0
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
300
250
200
150
100
10
10
10
10
10
10
50
R
R
0
-1
-2
-3
2
1
0
); T
10
)
100
-1
C
=25 °C, f =1 MHz
j
200
10
0
300
V
V
-55ºC
25ºC
10
R
R
[V]
[V]
1
100ºC
400
150ºC
175ºC
10
IDT05S60C
2
500
2006-03-14
10
600
3