IDT02S60C Infineon Technologies, IDT02S60C Datasheet - Page 4

• Manufacturer Part Number: IDT02S60C
• Description: Schottky (Diodes & Rectifiers) SiC Diode 600V 3A
• Manufacturer: Infineon Technologies

Specifications of IDT02S60C

• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 3 A
• Max Surge Current: 11.5 A
• Configuration: Single
• Forward Voltage Drop: 2.4 V
• Maximum Reverse Leakage Current: 15 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 2.0 A
• Qc (typ): 3.2 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT02S60CXK

Rev. 2.0
5 Typ. capacitance charge vs. current slope
Q
7 Transient thermal impedance
Z
parameter: D =t
thJC
C
=f(di
=f(t
10
10
10
10
4
3
2
1
0
100
-1
-2
1
0
10
F
p
/dt )
)
-5
0.02
0.05
0
0.1
4)
0.2
; T
0.5
p
/T
j
=150 °C; I
10
-4
400
di
F
/d t [A/µs]
F
t
≤I
10
P
[s]
-3
F,max
700
10
-2
1000
10
page 4
-1
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
10
10
10
10
10
10
60
45
30
15
-10
R
R
0
-5
-6
-7
-8
-9
); T
)
10
100
0
C
=25 °C, f =1 MHz
j
200
10
1
-55 °C
300
25 °C
V
V
R
R
100 °C
[V]
[V]
150 °C
175 °C
400
10
2
IDT02S60C
500
2007-04-25
10
600
3