1N5817 Taiwan Semiconductor, 1N5817 Datasheet - Page 2

• Manufacturer Part Number: 1N5817
• Description: Schottky (Diodes & Rectifiers) Vr/20V Io/1A T/R
• Manufacturer: Taiwan Semiconductor

Specifications of 1N5817

• Product: Schottky Rectifiers
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 0.45 V
• Maximum Reverse Leakage Current: 0.1 mA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Package / Case: DO-41
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: R0

400
200
100
.25
1.0
0.1
1.0
.75
.50
20
10
10
80
40
60
20
0
0.1
0
FIG.5- TYPICAL JUNCTION CAPACITANCE
FIG.1- MAXIMUM FORWARD CURRENT DERATING
0.1
FIG.3- TYPICAL FORWARD CHARACTERISTICS
0.3
1N5817
25
CURVE
RATINGS AND CHARACTERISTIC CURVES (1N5817 THRU 1N5819)
0.5
0.4
50
0.7
LEAD TEMPERATURE. ( C)
1.0
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
0.9
75
1N5818, 1N5819
1.1
4
100
1.3
0
10
Tj=25 o C
Pulse Width=300 s
1% Duty Cycle
1.5
125
Tj=25 C
1.7
0
150
40
1.9
100
175
2.1
0.01
100
100
0.1
0.1
10
30
25
20
15
10
10
5
1
1
0.01
1
0
FIG.6- TYPICAL TRANSIENT THERMAL
FIG.4- TYPICAL REVERSE LEAKAGE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
CHARACTERISTICS
CHARACTERISTICS PER LEG
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
SURGE CURRENT
2
20
0.1
T, PULSE DURATION, (sec)
5
NUMBER OF CYCLES AT 60Hz
40
10
1
Tj=125 C
8.3ms Single Half Sine Wave
JEDEC Method
60
0
20
Version: A06
10
Tj=25 C
80
0
50
100
100
100