BGX 50A E6327 Infineon Technologies, BGX 50A E6327 Datasheet

BGX 50A E6327

Manufacturer Part Number

BGX 50A E6327

Description

Diodes (General Purpose, Power, Switching) AF DIODE 70V 0.14A

Manufacturer

Infineon Technologies

Datasheets

1.BGX50AE6327.pdf (4 pages)

2.BGX50AE6327.pdf (6 pages)

Specifications of BGX 50A E6327

Product

Switching Diodes

Peak Reverse Voltage

70 V

Forward Continuous Current

0.14 A

Configuration

Quad Bridge

Recovery Time

6 ns

Forward Voltage Drop

1.3 V

Maximum Reverse Leakage Current

0.2 uA

Operating Temperature Range

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-143-4

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BGX50AE6327XT

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Silicon Switching Diode Array

Type

BGX50A

Maximum Ratings

Parameter

Diode reverse voltage

Peak reverse voltage

Forward current

Total power dissipation, T

Junction temperature

Storage temperature

Thermal Resistance

Junction - soldering point

1 For calculation of R

Bridge configuration

High-speed switching diode chip

thJA

Marking

U1s

please refer to Application Note Thermal Resistance

= 74 °C

1=C1/C2 2=A1/C4 3=A3/A4

Pin Configuration

Symbol

EHA00007

stg

tot

thJS

4=A2/C3 SOT143

65 ... 150

Value

140

210

150

360

Package

Jul-31-2001

BGX50A

VPS05178

Unit

°C

K/W

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