TSL27713FN TAOS, TSL27713FN Datasheet - Page 4

• Manufacturer Part Number: TSL27713FN
• Description: Light to Digital Converters Light to Digital w/Proximity
• Manufacturer: TAOS

Specifications of TSL27713FN

• Data Bus Width: 16 bit
• Peak Wavelength: 640 nm, 850 nm
• Maximum Operating Frequency: 795 KHz
• Operating Supply Voltage: 2.4 V to 3.6 V
• Operating Current: 175 uA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: - 30 C
• Interface Type: I2C
• Maximum Fall Time: 300 ns
• Maximum Rise Time: 300 ns
• Mounting Style: SMD/SMT
• Resolution: 16 bit
• Package / Case: DFN-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TSL2771
LIGHT-TO-DIGITAL CONVERTER
with PROXIMITY SENSING
TAOS100A − FEBRUARY 2010
Operating Characteristics, V
ALS Characteristics, V
(Notes 1 ,2, 3)
NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 625 nm LEDs
4
Copyright E 2010, TAOS Inc.
I
I
V
V
I
I
V
V
V
V
R
R
DD
DD
LEAK
LEAK
OL
IH
IL
e
Dark ALS ADC count value
Dark ALS ADC count value
ALS ADC integration time step size
ALS ADC Number of integration steps
Full scale ADC counts per step
Full scale ADC count value
ALS ADC count value
ALS ADC count value
ALS ADC count value ratio: Clear/IR
ALS ADC count value ratio: Clear/IR
ALS ADC count value ratio: Clear/IR
Irradiance responsivity
Irradiance responsivity
G i
Gain scaling, relative to 1
Gain scaling, relative to 1
setting
setting
Supply current
Supply current
INT SDA output low voltage
INT, SDA output low voltage
Leakage current, SDA, SCL, INT pins
Leakage current, LDR pin
SCL SDA input high voltage
SCL, SDA input high voltage
SCL SDA input low voltage
SCL, SDA input low voltage
2. The 625 nm irradiance E
3. The 850 nm irradiance E
and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production.
λp = 625 nm and spectral halfwidth Δλ½ = 20 nm.
λp = 850 nm and spectral halfwidth Δλ½ = 42 nm.
PARAMETER
li
PARAMETER
l ti
t 1
DD
×
×
×
gain
gain
= 3 V, T
e
i
e
is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength
is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength
DD
= 3 V, T
A
E
E
ATIME = 0xDB (100 ms)
ATIME = 0xFF
ATIME = 0xC0
λ
ATIME
ATIME = 0xF6 (27 ms), GAIN = 16
See note 2.
λ
ATIME
ATIME = 0xF6 (27 ms), GAIN = 16
See note 3.
λ
λ
λ
λ
λ
λ
See note 2.
λ
λ
See note 3.
8
16
16
120
p
p
p
p
p
p
p
p
×
e
e
= 255C, Gain = 16, AEN = 1 (unless otherwise noted)
r
×
×
= 625 nm, E
= 850 nm, E
= 625 nm, ATIME = 0xF6 (27 ms) See note 2.
= 850 nm, ATIME = 0xF6 (27 ms) See note 3.
= 625 nm, ATIME = 0xF6 (27 ms)
= 625 nm, ATIME = 0xF6 (27 ms)
= 850 nm, ATIME = 0xF6 (27 ms)
= 850 nm, ATIME = 0xF6 (27 ms)
= 0, AGAIN = 120
= 0, AGAIN = 120
×
625 nm ATIME
850 nm ATIME
A
TEST CONDITIONS
0xF6 (27 ms) GAIN
0xF6 (27 ms) GAIN
www.taosinc.com
= 255C (unless otherwise noted)
Active — ATIME = 100 ms
Wait mode
Sleep mode
3 mA sink current
6 mA sink current
TSL27711
TSL27713
TSL27711
TSL27713
e
e
= 171.6 μW/cm
= 219.7 μW/cm
TEST CONDITIONS
×
×
,
,
0xF6 (27 ms) See note 2
0xF6 (27 ms) See note 3
16
16
2
2
,
,
×
×
×
×
CHANNEL
Clear
Clear
Clear
Clear
Clear
IR
IR
IR
IR
IR
r
0.7 V
4000
4000
The LUMENOLOGY r Company
1.25
2.58
10 8
10.8
MIN
MIN
−10
−10
−10
DD
−5
41
41
10
0
0
0
0
1
65535
1024
5000
5000
2800
TYP
± 10
TYP
2.72
15 8
15.8
29.1
22.8
12.7
175
790
2.5
4.6
65
56
56
1
1
0.3 V
MAX
MAX
6000
6000
0.54
20 8
20.8
250
256
0.4
0.6
2.9
DD
68
68
10
10
10
10
4
5
5
5
counts/
counts
counts
counts
counts
UNIT
UNIT
steps
steps
steps
(μW/
(μW/
cm
cm
μA
μA
μA
μA
ms
%
%
%
%
%
%
V
V
V
V
V
V
2
2
)
)