BPV10NF Vishay, BPV10NF Datasheet - Page 2

• Manufacturer Part Number: BPV10NF
• Description: Photodiodes 60V 215mW 875nm
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder

Specifications of BPV10NF

• Lens Type: Black Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 60 uA
• Maximum Dark Current: 5 nA
• Maximum Rise Time: 2.5 ns
• Maximum Fall Time: 2.5 ns
• Package / Case: T-1 3/4
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Wavelength Typ: 940nm
• Sensitivity: 0.55A/W
• Bandwidth: 100MHz
• Half Angle: 20°
• Dark Current: 1nA
• Diode Case Style: T-1 3/4
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Active Area: 0.78mm2
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Forward Voltage: 1.3V
• Responsivity: 0.55A/W
• Dark Current (max): 5nA
• Power Dissipation: 215mW
• Light Current: 60uA
• Rise Time: 2.5ns
• Fall Time: 2.5ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81503
Rev. 1.7, 16-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Temperature coefficient of I
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8436
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
ra
Silicon PIN Photodiode, RoHS Compliant
60
For technical questions, contact: [e-mail]
V
V
V
R
R
R
= 20 V
E
E
E
E
E
= 50 V, R
= 50 V, R
80
V
e
e
e
e
e
R
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
V
V
= 1 mW/cm
= 1 mW/cm
V
= 0 V, f = 1 MHz, E = 0
R
R
TEST CONDITION
I
R
R
V
= 20 V, λ = 950 nm
= 20 V, λ = 950 nm
= 5 V, λ = 870 nm
R
= 100 µA, E = 0
λ = 950 nm
I
= 20 V, E = 0
F
V
V
V
L
L
100
= 50 mA
R
R
R
= 50 Ω, λ = 820 nm
= 50 Ω, λ = 820 nm
= 5 V
= 5 V
= 5 V
2
2
2
2
2
, λ = 870 nm,
, λ = 950 nm,
, λ = 870 nm,
, λ = 870 nm
, λ = 870 nm
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
NEP
s(λ)
λ
C
V
V
D*
I
I
I
λ
(BR)
I
ϕ
η
0.5
t
t
ro
ra
ra
K
O
p
r
f
F
D
Ira
94 8621
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
30
T
20
E
amb
e
λ
=1 mW/cm
V
Vishay Semiconductors
- Ambient Temperature (°C)
= 870 nm
R
790 to 1050
= 5 V
3 x 10
3 x 10
40
TYP.
- 0.1
± 20
0.55
450
940
1.0
2.5
2.5
11
50
55
60
70
1
-14
2
12
60
MAX.
1.3
80
BPV10NF
5
www.vishay.com
100
cm√Hz/W
W/√Hz
UNIT
%/K
A/W
deg
mV
nm
nm
nA
µA
µA
µA
pF
ns
ns
%
V
V
339