BPV10NF Vishay, BPV10NF Datasheet

Photodiodes 60V 215mW 875nm

BPV10NF

Manufacturer Part Number
BPV10NF
Description
Photodiodes 60V 215mW 875nm
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Datasheets

Specifications of BPV10NF

Lens Type
Black Epoxy
Photodiode Material
Silicon
Peak Wavelength
940 nm
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
60 uA
Maximum Dark Current
5 nA
Maximum Rise Time
2.5 ns
Maximum Fall Time
2.5 ns
Package / Case
T-1 3/4
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Wavelength Typ
940nm
Sensitivity
0.55A/W
Bandwidth
100MHz
Half Angle
20°
Dark Current
1nA
Diode Case Style
T-1 3/4
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Active Area
0.78mm2
Rohs Compliant
Yes
Svhc
No SVHC (20-Jun-2011)
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Forward Voltage
1.3V
Responsivity
0.55A/W
Dark Current (max)
5nA
Power Dissipation
215mW
Light Current
60uA
Rise Time
2.5ns
Fall Time
2.5ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPV10NF
Manufacturer:
OSRAM
Quantity:
2 000
Part Number:
BPV10NF
Manufacturer:
VISHAY
Quantity:
300
Part Number:
BPV10NF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
BPV10NF
Quantity:
70 000
High Speed Silicon PIN Photodiode
Description
BPV10NF is a high sensitive and wide bandwidth PIN
photodiode in a standard T-1¾ plastic package. The
black epoxy is an universal IR filter, spectrally
matched to GaAs (λ = 950 nm) and GaAlAs
BPV10NF is optimized for serial infrared links accord-
ing to the IrDA standard.
Features
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 81503
Rev. 1.4, 08-Mar-05
(λ = 870 nm) IR emitters.
• Extra fast response times
• High modulation bandwidth (>100 MHz)
• High radiant sensitivity
• Radiant sensitive area A = 0.78 mm
• Low junction capacitance
• Standard T-1¾ (∅ 5 mm) package with universal
• Angle of half sensitivity ϕ = ± 20°
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode capacitance
amb
amb
IR filter
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
T
2 mm from body, t ≤ 5 s
I
I
V
V
F
R
amb
R
R
= 50 mA
= 100 µA, E = 0
= 20 V, E = 0
= 0 V, f = 1 MHz, E = 0
≤ 25 °C
Test condition
Test condition
2
Applications
Infrared high speed remote control and free air trans-
mission systems with high modulation frequencies or
high data transmission rate requirements , especially
for direct point to point links.
BPV10NF is ideal for the design of transmission sys-
tems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK- coded,
450 kHz or 1.3 MHz). Recommended emitter diodes
are TSHF 5...-series or TSSF 4500.
Symbol
V
C
V
(BR)
I
ro
F
D
Symbol
R
T
T
T
V
P
amb
thJA
T
stg
sd
R
V
j
Min
60
16140
- 55 to + 100
- 55 to + 100
Vishay Semiconductors
Value
Typ.
215
100
260
350
11
60
1
1
BPV10NF
Max
1.3
5
www.vishay.com
K/W
Unit
mW
°C
°C
°C
°C
V
Unit
nA
pF
V
V
1

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BPV10NF Summary of contents

Page 1

... High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs (λ = 950 nm) and GaAlAs (λ = 870 nm) IR emitters. BPV10NF is optimized for serial infrared links accord- ing to the IrDA standard ...

Page 2

... BPV10NF Vishay Semiconductors Optical Characteristics °C, unless otherwise specified amb Parameter Open Circuit Voltage mW/cm e Short Circuit Current mW/cm e Reverse Light Current mW/ mW/ Temp. Coefficient mW/ λ = 870 nm Absolute Spectral Sensitivity V R Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth λ = 950 nm Quantum Efficiency = 20 V, λ ...

Page 3

... Document Number 81503 Rev. 1.4, 08-Mar-05 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10 750 8426 Figure 6. Relative Spectral Sensitivity vs. Wavelength 100 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 100 BPV10NF Vishay Semiconductors 850 950 1050 1150 λ - Wavelength ( 100 W 1 8562 www.vishay.com 3 ...

Page 4

... BPV10NF Vishay Semiconductors Package Dimensions in mm www.vishay.com 4 96 12198 Document Number 81503 Rev. 1.4, 08-Mar-05 ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81503 Rev. 1.4, 08-Mar-05 and may do so without further notice. BPV10NF Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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