RPT-34PB3F Rohm Semiconductor, RPT-34PB3F Datasheet - Page 2

• Manufacturer Part Number: RPT-34PB3F
• Description: Photodetector Transistors PHOTO Visible Ray Cut Colored Pkg
• Manufacturer: Rohm Semiconductor
• Type: Chipr

Specifications of RPT-34PB3F

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 500 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Package / Case: T-1
• Voltage - Collector Emitter Breakdown (max): 32V
• Current - Collector (ic) (max): 30mA
• Current - Dark (id) (max): 500nA
• Wavelength: 800nm
• Viewing Angle: 72°
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical and optical characteristic curves
○
RPT-34PB3F
c
www.rohm.com
1000
1000
100
100
10
0.1
10
2010 ROHM Co., Ltd. All rights reserved.
10
8
6
4
2
0
1
0
1
0.1
COLLECTOR - EMITTER VOLTAGE : V
Fig.4 Output characteristics
−25
Fig.7 Response time vs.
AMBIENT TEMPERATURE : Ta (°C)
2
Fig.1 Dark current
COLLECTOR CURRENT : I
4
0
collector current
vs. ambient temperature
1
6
25
8
E=1000Lux
10
50
750Lux
500Lux
250Lux
10
12
V
V
V
R
R
R
C
CE
CE
CE
L
L
L
(
Ta=25°C
V
=1kΩ
=10V
=20V
=30V
=500Ω
=100Ω
mA)
75
CE
14
CE
=5V
(V)
16
100
1000
100
500
200
100
80
60
40
20
50
20
10
0
400
90°
80°
−25
70°
Fig.2 Relative output
Fig.5 Spectral sensitivity
RELATIVE LUMINOUS INTENSITY : (%)
500
OPTICAL WAVELENGTH : λ (
AMBIENT TEMPERATURE : Ta (°C)
60°
600
vs. ambient temperature
50°
0
700
40°
2/2
25
800
30°
50
900 1000 1100
20°
nm)
Fig.8 Directional pattern
75
10°
100
0
0°
ANGULAR DISPLACEMENT : θ (
10° 20° 30° 40° 50° 60° 70° 80° 90°
160
120
80
40
8
6
4
2
0
−25
0
V
CE
Fig.6 Collector dissipation vs.
Fig.3 Light current vs. irradiance
AMBIENT TEMPERATURE : Ta (°C)
=5V
250
0
deg
ILLUMINANCE : E (
ambient temperature
)
2010.06 - Rev.A
100
500
80
60
40
20
25
Data Sheet
750
50
Lx)
1000
75
1250
100