RPT-34PB3F Rohm Semiconductor, RPT-34PB3F Datasheet

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RPT-34PB3F

Manufacturer Part Number
RPT-34PB3F
Description
Photodetector Transistors PHOTO Visible Ray Cut Colored Pkg
Manufacturer
Rohm Semiconductor
Type
Chipr
Datasheet

Specifications of RPT-34PB3F

Maximum Power Dissipation
150 mW
Maximum Dark Current
500 nA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Package / Case
T-1
Voltage - Collector Emitter Breakdown (max)
32V
Current - Collector (ic) (max)
30mA
Current - Dark (id) (max)
500nA
Wavelength
800nm
Viewing Angle
72°
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RPT-34PB3F
Manufacturer:
ROHM Semiconductor
Quantity:
1 877
Part Number:
RPT-34PB3FF
Manufacturer:
SEMITEC
Quantity:
1 528
Phototransistor, top view type
The RPT-34PB3F is a silicon planar phototransistor.
It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
Applications
Optical control equipment
Features
High sensitivity.
Absolute maximum ratings (Ta = 25C)
Electrical and optical characteristics (Ta = 25C)
c
www.rohm.com
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
RPT-34PB3F
2010 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Symbol
V
θ
I
CE(sat)
CEO
t
λ
Symbol
1 / 2
I
r
C
·t
P
V
V
Topr
Tstg
f
P
CEO
ECO
I
C
C
Min.
2.0
−25~+85
−30~+85
Typ.
800
±36
10
Limits
150
32
30
5
Max.
0.5
0.4
1/2
Dimensions (Units : mm)
Unit
deg
mA
nm
μA
μs
V
Unit
mW
mA
°C
°C
V
V
V
V
I
V
C
CE
CE
CC
=1mA, E=500L
=5V, E=500L
=10V(Black box)
=5V, I
2−0.6
2−0.5
C
=1mA, R
1
Conditions
φ3.8±0.3
φ3.1±0.2
(2.5)
φ3.5
X
X
2
L
=100Ω
Notes :
1. Unspecfied tolerance
2. Dimension in parenthesis
Internal connection diagram
are show for reference.
shall be ±0.2.
Emitter
1
2010.06 - Rev.A
Collector
2

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RPT-34PB3F Summary of contents

Page 1

... Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Applications Optical control equipment Features High sensitivity. Absolute maximum ratings (Ta = 25C) Parameter Collector-emitter voltage Emitter-collector voltage Collector current ...

Page 2

... RPT-34PB3F Electrical and optical characteristic curves 1000 100 V =10V CE V =20V CE V =30V 0.1 − 100 AMBIENT TEMPERATURE : Ta (°C) Fig.1 Dark current vs. ambient temperature 10 8 E=1000Lux 6 750Lux 4 500Lux 2 250Lux (V) COLLECTOR - EMITTER VOLTAGE : V CE Fig.4 Output characteristics 1000 Ta=25°C V =5V CE 100 R =1kΩ ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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