SFH 3410-2/3-Z OSRAM Opto Semiconductors Inc, SFH 3410-2/3-Z Datasheet - Page 2

• Manufacturer Part Number: SFH 3410-2/3-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR (ALS) SMT SMART DIL
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr
• Series: -r

Specifications of SFH 3410-2/3-Z

• Maximum Dark Current: 3 nA
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Collector-emitter Saturation Voltage: 100 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: DIL
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Current - Collector (ic) (max): 20mA
• Current - Dark (id) (max): 50nA
• Wavelength: 570nm
• Viewing Angle: 120°
• Power - Max: -
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2654

Grenzwerte (
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Emitter-Kollektorspannung
Emitter-collector voltage
Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
Fotostrom
Photocurrent
E
2007-04-02
CE
v
= 10% von
= 10% of
= 20 lx, Normlicht/standard light A,
= 5 V
V
S
CE
max
T
S
T
A
max
= 0 V,
A
= 25 °C)
= 25
f
°
C)
= 1 MHz,
E
= 0
V
CE
= 5 V
Symbol
Symbol
T
V
I
V
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
I
C
CEO
PCE
2
op
Smax
CE
EC
CE
×
×
;
B
W
T
stg
Wert
Value
– 40 … + 100
5.5
20
0.5
Wert
Value
570
350 … 970
0.29
0.75 × 0.75
± 60
3.9
3 (< 50)
>3.2
Einheit
Unit
°C
V
mA
V
Einheit
Unit
nm
nm
mm
mm × mm
Grad.
deg.
pF
nA
μ
A
2
SFH 3410