MCIMX512DJM8CR2 Freescale Semiconductor, MCIMX512DJM8CR2 Datasheet - Page 25

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MCIMX512DJM8CR2

Manufacturer Part Number
MCIMX512DJM8CR2
Description
IC MPU I.MX51 529MABGA
Manufacturer
Freescale Semiconductor
Series
i.MX51r
Datasheet

Specifications of MCIMX512DJM8CR2

Core Processor
ARM Cortex-A8
Core Size
32-Bit
Speed
800MHz
Connectivity
1-Wire, EBI/EMI, Ethernet, I²C, IrDA, MMC, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
128
Program Memory Type
ROMless
Ram Size
128K x 8
Voltage - Supply (vcc/vdd)
0.8 V ~ 1.15 V
Oscillator Type
External
Operating Temperature
-20°C ~ 85°C
Package / Case
529-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-
4.3.1
The parameters in
1
2
3
Freescale Semiconductor
High-level output voltage
Low-level output voltage
Low-Level DC input voltage
Input Hysteresis
Schmitt trigger VT+
Schmitt trigger VT-
Input current (no pull-up/down)
Input current (22 kΩ Pull-up)
Input current (47 kΩ Pull-up)
Input current (100 kΩ Pull-up)
Input current (100 kΩ Pull-down)
Keeper Circuit Resistance
High-level output current
Low-level output current
High-Level DC input voltage
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
I/O leakage currents are listed in
Parameter
GPIO/HSGPIO DC Parameters
The term OVDD in this section refers to the associated supply rail of an
input or output. The association is shown in
1, 2
1,
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
2
Table 18
1
1
Table 18. GPIO/HSGPIO DC Electrical Characteristics
are guaranteed per the operating ranges in
Table
Symbol
VHYS
VT+
Voh
VIH
VIL
VT-
Vol
Ioh
Iol
Iin
Iin
Iin
Iin
Iin
25.
Vout = 0.8
Vout = 0.2
Low drive
Medium drive
High drive
Max drive
Low drive
Medium drive
High drive
Max drive
Test Conditions
Vin = OVDD or 0
OVDD = 1.875V
OVDD = 2.775V
OVDD = 1.875
OVDD = 2.775
Iout = -1 mA
Vin = OVDD
Iout = 1mA
Vin = 0
Vin = 0
Vin = 0
NOTE
×
×
OVDD
OVDD
Table 128
OVDD –0.15
0.7
0.5OVDD
×
–1.9
–3.7
–5.2
–6.6
0.25
Min
1.9
3.7
5.2
6.6
0
and
OVDD
Table
Table
13, unless otherwise noted.
0.34
0.45
Typ
22
17
131.
Electrical Characteristics
0.5
OVDD + 0.3
0.3
See Note
OVDD
×
×
Max
0.15
161
76
36
36
OVDD
OVDD
3
Unit
mA
mA
μA
μA
μA
μA
V
V
V
V
V
V
V
25

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