MCIMX27MOP4A Freescale Semiconductor, MCIMX27MOP4A Datasheet - Page 43

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MCIMX27MOP4A

Manufacturer Part Number
MCIMX27MOP4A
Description
IC MPU I.MX27 19X19 473MAPBGA
Manufacturer
Freescale Semiconductor
Series
i.MX27r
Datasheets

Specifications of MCIMX27MOP4A

Core Processor
ARM9
Core Size
32-Bit
Speed
400MHz
Connectivity
1-Wire, CAN, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, LCD, POR, PWM, WDT
Program Memory Type
ROMless
Ram Size
45K x 8
Voltage - Supply (vcc/vdd)
1.38 V ~ 1.52 V
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
473-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Number Of I /o
-
Eeprom Size
-
Program Memory Size
-
Data Converters
-

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4.1.3
Unless specified, AC timing parameters are specified for 15 pF loading on i.MX27/iMX27L pads. Drive
strength has been kept at default/reset values for testing. EMI timing has been verified with high drive
strength setting and 25 pF loads. SDHC timing has also been verified with high drive strength setting.
Unless otherwise noted, AC/DC parameters are guaranteed at operating conditions shown in
4.2
This section contains the i.MX27/iMX27L electrical information including timing specifications, arranged
in alphabetical order by module name.
4.2.1
4.2.1.1
The over-operating characteristics appear in
Rate) pads (unless otherwise noted).
Freescale Semiconductor
High-level output voltage
Low-level output voltage
High-level output current, slow slew rate
High-level output current, fast slew rate
Low-level output current, slow slew rate
Low-level output current, fast slew rate
Input Hysteresis
Schmitt trigger VT+
Schmitt trigger VT-
Module-Level Electrical Specifications
Test Conditions and Recommended Settings
Pads IO (PADIO) Electricals
Parameter
DC Electrical Characteristics
Table 12. GPIO Pads DC Electrical Parameters
i.MX27 and i.MX27L Data Sheet, Rev. 1.6
Symbol
I
I
I
I
V
V
OH_S
V
OH_F
OL_S
V
V
OL_F
HYS
T
OH
OL
T
+
-
Table 12
I
I
OH
OL
Hysteresis enabled
Hysteresis enabled
Hysteresis enabled
Test Conditions
V
V
V
V
OH
OH
= specified Drive
OL
OL
= specified Drive
I
I
OH
Max High
Max High
Max High
Max High
OL
Normal
Normal
Normal
Normal
= 0.2*N
= 0.2*N
= 0.8*N
= 0.8*N
High
High
High
High
for GPIO pads and
= -1 mA
= 1 mA
VDD
VDD
VDD
1
VDD
1
1
1
N
0.8*N
0.5*Q
VDD
0.25
Min
–2
–4
–8
–4
–6
–8
2
4
8
4
6
8
-0.15
VDD
VDD
Table 13
Typical
for DDR (Double Data
Electrical Characteristics
0.5*Q
0.2*N
0.15
Max
VDD
VDD
Table
Units
7.
mA
mA
mA
mA
V
V
V
V
V
V
V
43

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