PBSS4041NZ,115 NXP Semiconductors, PBSS4041NZ,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS4041NZ,115
• Description: TRANS NPN 60V 7A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041NZ,115

• Package / Case: TO-261-4, TO-261AA
• Mounting Type: Surface Mount
• Power - Max: 2.6W
• Current - Collector (ic) (max): 7A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: NPN
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 105MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 4A, 2V
• Vce Saturation (max) @ Ib, Ic: 195mV @ 350mA, 7A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS4041NZ_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
P
T
T
T
Fig 1.
j
amb
stg
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
P
(W)
Rev. 01 — 31 March 2010
tot
2
3.0
2.0
1.0
O
0
−75
3
, standard footprint
…continued
−25
2
(1)
(2)
(3)
O
Conditions
T
3
, standard footprint.
amb
25
≤ 25 °C
2
60 V, 7 A NPN low V
75
125
T
006aac060
amb
[1]
[2]
[3]
(°C)
PBSS4041NZ
-
175
Min
-
-
-
−55
−65
CEsat
© NXP B.V. 2010. All rights reserved.
Max
770
1700
2600
150
+150
+150
(BISS) transistor
Unit
mW
mW
mW
°C
°C
°C
2
.
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