MRF8S26120HSR3 Freescale Semiconductor, MRF8S26120HSR3 Datasheet - Page 9

• Manufacturer Part Number: MRF8S26120HSR3
• Description: FET RF N-CH 2.6GHZ 28V NI780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S26120HSR3

• Transistor Type: N-Channel
• Frequency: 2.7GHz
• Gain: 15.6dB
• Voltage - Rated: 65V
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
57
56
55
54
53
52
51
50
49
48
47
46
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
30
V
DD
= 28 Vdc, I
31
(MHz)
(MHz)
Figure 10. Pulsed CW Output Power
2620
2655
2690
2620
2655
2690
f
f
32
versus Input Power @ 28 V
Test Impedances per Compression Level
DQ
33
= 861 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
P
P1dB
P1dB
P1dB
in
Watts
149
144
146
, INPUT POWER (dBm)
34
2690 MHz
2620 MHz
2655 MHz
P1dB
35
5.83 -- j7.00
7.87 -- j6.87
9.46 -- j5.13
Z
dBm
51.7
51.6
51.6
source
36
Ω
37
Watts
182
177
179
38
2620 MHz
2690 MHz
2655 MHz
1.44 -- j2.87
1.72 -- j3.15
1.52 -- j3.20
P3dB
39
Ideal
Z
load
Ω
dBm
52.6
52.5
52.5
Actual
40
MRF8S26120HR3 MRF8S26120HSR3
41
9