MRF8S26120HSR3 Freescale Semiconductor, MRF8S26120HSR3 Datasheet - Page 2

• Manufacturer Part Number: MRF8S26120HSR3
• Description: FET RF N-CH 2.6GHZ 28V NI780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S26120HSR3

• Transistor Type: N-Channel
• Frequency: 2.7GHz
• Gain: 15.6dB
• Voltage - Rated: 65V
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

2
MRF8S26120HR3 MRF8S26120HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(1)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 172 μAdc)
= 900 mAdc, Measured in Functional Test)
= 1.7 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
Frequency
2620 MHz
2655 MHz
2690 MHz
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
Symbol
V
V
V
ACPR
I
I
I
DQ
PAR
DD
(dB)
15.5
15.5
15.6
DS(on)
GS(th)
GS(Q)
G
G
IRL
DSS
DSS
GSS
η
ps
ps
D
= 28 Vdc, I
= 900 mA, P
14.5
28.0
31.5
31.1
31.1
Min
DQ
(%)
1.2
1.5
0.1
5.7
η
—
—
—
—
—
D
out
= 900 mA, P
= 28 W Avg., f = 2690 MHz,
Output PAR
--36.7
0.24
15.6
31.1
Typ
--14
2.0
2.6
6.2
—
—
—
(dB)
6.3
6.3
6.2
IV (Minimum)
A (Minimum)
2 (Minimum)
out
Class
Freescale Semiconductor
= 28 W Avg.,
--34.5
Max
17.5
2.7
3.0
0.3
10
—
—
--9
ACPR
1
1
(dBc)
--38.0
--37.3
--36.7
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
(dB)
IRL
%
--13
--14
--14