MRF8P20100HR3 Freescale Semiconductor, MRF8P20100HR3 Datasheet - Page 9

• Manufacturer Part Number: MRF8P20100HR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780H-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
NOTE: Measurement made on the Class AB, carrier side of the device.
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
55
53
51
49
47
45
43
41
39
37
35
33
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
V
15
DD
= 28 Vdc, I
(MHz)
17
(MHz)
2010
2025
2010
2025
Figure 13. Pulsed CW Output Power
f
f
19
versus Input Power @ 28 V
Test Impedances per Compression Level
DQA
21
= 400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
P
P1dB
P1dB
in
Watts
, INPUT POWER (dBm)
23
62
63
2010 MHz
P1dB
25
2.83 -- j12.46
3.43 -- j13.20
Z
dBm
47.9
48.0
source
27
Ω
2025 MHz
29
Watts
2010 MHz
76
78
31
3.18 -- j6.16
3.16 -- j6.14
P3dB
33
Z
2025 MHz
load
Ω
Ideal
dBm
48.8
48.9
Actual
35
MRF8P20100HR3 MRF8P20100HSR3
37
9