MRF8P20100HR3 Freescale Semiconductor, MRF8P20100HR3 Datasheet - Page 14

• Manufacturer Part Number: MRF8P20100HR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780H-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

14
MRF8P20100HR3 MRF8P20100HSR3
1780
6
5
4
3
2
1
0
V
I
EDGE Modulation
DQA
DD
= 28 Vdc
= I
Figure 23. EVM versus Frequency
1800
DQB
= 330 mA
f, FREQUENCY (MHz)
1820
17 W Avg.
P
35 W Avg.
17.6
17.2
16.8
16.4
15.6
15.2
14.8
14.4
out
18
16
14
1840
Efficiency versus Frequency @ P
Figure 21. Power Gain, Input Return Loss and Drain
18
17
16
15
14
13
12
1760
= 53 W Avg.
TYPICAL CHARACTERISTICS — GSM EDGE
1
EVM
G
1805 MHz
V
I
η
DQA
Figure 22. Power Gain and Drain Efficiency
ps
DD
D
1780
= 28 Vdc
= I
G
IRL
1860
η
DQB
ps
D
1800
= 330 mA
P
out
1840 MHz
versus Output Power
, OUTPUT POWER (WATTS) CW
1820
f, FREQUENCY (MHz)
1880
10
V
I
EDGE Modulation
DQA
DD
1840
1805 MHz
1880 MHz
= 28 Vdc, P
= I
DQB
1840 MHz
1860
= 330 mA
1880 MHz
--70
--35
--40
--45
--50
--55
--60
--65
out
out
0
= 42 W (Avg.)
1880
= 42 Watts Avg.
Figure 24. Spectral Regrowth at 400 kHz
V
I
EDGE Modulation
DQA
100
DD
= 28 Vdc
1900
= I
20
DQB
= 330 mA
1920
P
versus Output Power
300
out
40
39
38
37
36
3.5
3
2.5
2
1.5
, OUTPUT POWER (WATTS)
1
1805 MHz
40
60
50
40
30
20
10
0
1880 MHz
60
Freescale Semiconductor
--18
--20
--22
--24
--26
--28
1840 MHz
80
RF Device Data
100
120