BLL6H1214L-250,112 NXP Semiconductors, BLL6H1214L-250,112 Datasheet - Page 2

• Manufacturer Part Number: BLL6H1214L-250,112
• Description: TRANS L-BAND RADAR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214L-250,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 42A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 250W
• Resistance Drain-source Rds (on): 100 mOhms
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 42 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLL6H1214L-250_1214LS-250
Product data sheet
1.3 Applications

Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLL6H1214L-250 (SOT502A)
1
2
3
BLL6H1214LS-250 (SOT502B)
1
2
3
Type number
BLL6H1214L-250
BLL6H1214LS-250
Symbol
V
I
T
V
T
D
stg
j
DS
GS
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
-
Package
Name
-
Rev. 3 — 14 July 2010
earless flanged LDMOST ceramic package; 2 leads
Description
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
Conditions
[1]
[1]
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
Simplified outline
1
2
1
2
3
3
Graphic symbol
-
Min
-
0.5
-
65
© NXP B.V. 2010. All rights reserved.
2
2
Max
100
+13
42
+150
200
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 13
Unit
V
V
A
C
C