BLF7G20L-250P,112 NXP Semiconductors, BLF7G20L-250P,112 Datasheet - Page 4
![TRANSISTOR PWR LDMOS SOT539](/photos/27/8/270815/sot539a_sml.jpg)
BLF7G20L-250P,112
Manufacturer Part Number
BLF7G20L-250P,112
Description
TRANSISTOR PWR LDMOS SOT539
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G20L-250P118.pdf
(14 pages)
Specifications of BLF7G20L-250P,112
Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
1.81GHz ~ 1.88GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
37.54A
Current - Test
1.9A
Voltage - Test
28V
Power - Output
70W
Resistance Drain-source Rds (on)
0.078 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
BLF7G20L-250P_7G20LS-250P
Product data sheet
7.2 Impedance information
Table 8.
Measured load-pull data half device; I
[1]
f
(MHz)
1750
1805
1845
1880
1930
Fig 1.
Z
S
and Z
Definition of transistor impedance
Typical impedance
L
defined in
BLF7G20L-250P; BLF7G20LS-250P
All information provided in this document is subject to legal disclaimers.
Figure
Rev. 3 — 1 March 2011
1.
Z
()
1.31 j3.53
1.39 j3.75
1.48 j4.10
1.55 j4.19
1.97 j4.48
S
[1]
Dq
gate
= 950 mA; V
Z
S
001aaf059
DS
Z
drain
= 28 V.
L
Z
()
2.47 j3.91
2.27 j3.63
2.32 j3.19
1.89 j3.15
1.70 j2.95
L
[1]
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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