BLF6G10L-260PRN,11 NXP Semiconductors, BLF6G10L-260PRN,11 Datasheet - Page 12

• Manufacturer Part Number: BLF6G10L-260PRN,11
• Description: TRANS PWR LDMOS SOT539
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10L-260PRN,11

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 917.5MHz ~ 962.5MHz
• Gain: 22dB
• Voltage - Rated: 65V
• Current Rating: 64A
• Current - Test: 1.8A
• Voltage - Test: 28V
• Power - Output: 40W
• Resistance Drain-source Rds (on): 0.1 Ohms
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 64 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
10. Abbreviations
BLF6G10L-260PRN_LS-260PRN
Product data sheet
Table 11.
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
GSM
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 1 — 12 August 2010
BLF6G10L(S)-260PRN
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
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