BLF7G22LS-200,112 NXP Semiconductors, BLF7G22LS-200,112 Datasheet - Page 9

• Manufacturer Part Number: BLF7G22LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29.5A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 30W
• Mounting Style: SMD/SMT
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 29.5 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 18.5@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 18.9S
• Drain Source Resistance (max): 54(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 31%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G22L-200_7G22LS-200
Preliminary data sheet
Document ID
BLF7G22L-200_7G22LS-200 v.2 20101228
Modifications:
BLF7G22L-200_7G22LS-200 v.1 20100419
Revision history
Table 8.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
Release date Data sheet status
Abbreviations
•
•
Table 7 on page
Section 7.1 on page
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF7G22L-200; BLF7G22LS-200
Rev. 2 — 28 December 2010
Preliminary data sheet -
Objective data sheet
3: Maximum value of ACPR has been removed.
3: The value of P
Change notice Supersedes
-
L
has been changed to 200 W (CW)
BLF7G22L-200_7G22LS-200
v.1
-
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
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