BLF7G22LS-200,112 NXP Semiconductors, BLF7G22LS-200,112 Datasheet - Page 11

TRANSISTOR PWR LDMOS SOT502

BLF7G22LS-200,112

Manufacturer Part Number
BLF7G22LS-200,112
Description
TRANSISTOR PWR LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BLF7G22LS-200,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
2.11GHz ~ 2.17GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
29.5A
Current - Test
1.62A
Voltage - Test
28V
Power - Output
30W
Mounting Style
SMD/SMT
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
29.5 A
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
30W(Typ)
Power Gain (typ)@vds
18.5@28VdB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
18.9S
Drain Source Resistance (max)
54(Typ)@6.05Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
31%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BLF7G22L-200_7G22LS-200
Preliminary data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
BLF7G22L-200; BLF7G22LS-200
Rev. 2 — 28 December 2010
salesaddresses@nxp.com
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
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