BF909WR,135 NXP Semiconductors, BF909WR,135 Datasheet - Page 13

• Manufacturer Part Number: BF909WR,135
• Description: MOSFET N-CH 7V 40MA SOT343
• Manufacturer: NXP Semiconductors

Specifications of BF909WR,135

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 7V
• Current Rating: 40mA
• Noise Figure: 2dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 20 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Compliant

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R77/03/pp 13
Date of release: 2010 Sep 15