BF998R,235 NXP Semiconductors, BF998R,235 Datasheet - Page 6

• Manufacturer Part Number: BF998R,235
• Description: MOSFET N-CH 12V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF998R,235

• Package / Case: TO-253-4 Reverse Pinning, SC-61
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1996 Aug 01
handbook, halfpage
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
Fig.9
V
V
Fig.11 Gate 1 input capacitance as a function of
DS
DS
(mS)
|y fs |
= 8 V; T
(pF)
= 8 V; V
C is
2.3
2.1
1.9
1.7
1.5
1.3
30
24
18
12
6
0
−2.4
−1
Forward transfer admittance as a function of
gate 1 voltage; typical values.
gate 1-source voltage; typical values.
amb
G2-S
= 25 C.
= 4 V; f = 1 MHz; T
−1.6
−0.8
0
amb
= 25 C.
V G1 (V)
V G2-S = 4 V
0
V G1-S (V)
MGE812
MGE809
3 V
2 V
1 V
0 V
0.8
1
6
handbook, halfpage
handbook, halfpage
V
V
Fig.12 Gate 1 input capacitance as a function of
G2-S
DS
C os
(pF)
(pF)
Fig.10 Output capacitance as a function of
= 8 V; V
C is
= 4 V; f = 1 MHz; T
2.4
2.3
2.2
2.1
2.0
1.5
1.4
1.3
1.2
1.1
1.0
4
6
gate 2-source voltage; typical values.
G1-S
drain-source voltage; typical values.
= 0 V; f = 1 MHz; T
6
4
amb
= 25 C.
8
2
amb
BF998; BF998R
10
= 25 C.
Product specification
V DS (V)
0
V G2−S (V)
12
12 mA
10 mA
8 mA
MBH479
MGE810
−2
14