IPW60R280E6 Infineon Technologies, IPW60R280E6 Datasheet - Page 5
![MOSFET N-CH 600V 13.8A TO247](/photos/5/53/55366/448-to-247_sml.jpg)
IPW60R280E6
Manufacturer Part Number
IPW60R280E6
Description
MOSFET N-CH 600V 13.8A TO247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPW60R280E6.pdf
(17 pages)
Specifications of IPW60R280E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
13.8A
Vgs(th) (max) @ Id
3.5V @ 430µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 100V
Power - Max
104W
Mounting Type
*
Package / Case
*
Packages
PG-TO247-3
Vds (max)
600.0 V
Package
TO-247
Rds(on) @ Tj=25°c Vgs=10
280.0 mOhm
Id(max) @ Tc=25°c
13.8 A
Idpuls (max)
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPW60R280E6
Manufacturer:
Infineon
Quantity:
240
3
Table 3
Parameter
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at
leads
Table 4
Parameter
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at
leads
Final Data Sheet
Thermal characteristics
Thermal characteristics TO-220 (IPP60R280E6),TO-247 (IPW60R280E6)
Thermal characteristics TO-220FullPAK (IPA60R280E6)
Symbol
R
R
T
Symbol
R
R
T
sold
sold
thJC
thJA
thJC
thJA
Min.
-
-
-
Min.
-
-
-
5
Typ.
-
-
-
Typ.
-
-
-
Values
Values
600V CoolMOS™ E6 Power Transistor
Max.
1.2
62
260
Max.
3.9
80
260
Unit
°C/W
°C
Unit
°C/W
°C
Thermal characteristics
Note /
Test Condition
leaded
1.6 mm (0.063 in.)
from case for 10 s
Note /
Test Condition
leaded
1.6 mm (0.063 in.)
from case for 10 s
Rev. 2.0, 2010-04-09
IPx60R280E6