IPA60R280E6 Infineon Technologies, IPA60R280E6 Datasheet - Page 13
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IPA60R280E6
Manufacturer Part Number
IPA60R280E6
Description
MOSFET N-CH 600V 13.8A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA60R280E6.pdf
(17 pages)
Specifications of IPA60R280E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
13.8A
Vgs(th) (max) @ Id
3.5V @ 430µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 100V
Power - Max
32W
Mounting Type
*
Package / Case
*
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
280.0 mOhm
Id(max) @ Tc=25°c
13.8 A
Idpuls (max)
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R280E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA60R280E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
6
Table 19
Table 20
Table 21
Final Data Sheet
Switching times test circuit for inductive load
Unclamped inductive load test circuit
Test circuit for diode characteristics
R
G1
R
R
G2
G1
V
Test circuits
Switching times test circuit and waveform for inductive load
Unclamped inductive load test circuit and waveform
Test circuit and waveform for diode characteristics
= R
GS
I
D
I
G2
D
V
V
V
DS
DS
DS
Switching time waveform
Unclamped inductive waveform
Diode recovery waveform
13
V
V
GS
DS
V
DS
600V CoolMOS™ E6 Power Transistor
10%
90%
I
D
t
d(on)
t
on
t
r
V
t
D
d(off)
t
off
Rev. 2.0, 2010-04-09
t
f
V
(BR)DS
IPx60R280E6
Test circuits
V
DS