IPP60R280E6 Infineon Technologies, IPP60R280E6 Datasheet - Page 6

• Manufacturer Part Number: IPP60R280E6
• Description: MOSFET N-CH 600V 13.8A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R280E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13.8A
• Vgs(th) (max) @ Id: 3.5V @ 430µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 100V
• Power - Max: 104W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13.8 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 280.0 mOhm
• Id(max) @ Tc=25°c: 13.8 A
• Idpuls (max): 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Electrical characteristics, at
Table 5
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Table 6
Parameter
Input capacitance
Output capacitance
Effective output capacitance,
energy related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
2)
Final Data Sheet
C
C
o(er)
o(tr)
2)
is a fixed capacitance that gives the same charging time as
is a fixed capacitance that gives the same stored energy as
Electrical characteristics
Static characteristics
Dynamic characteristics
1)
T
j=25 °C, unless otherwise specified.
Symbol
V
V
I
I
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
G
Symbol
C
C
C
C
t
t
t
t
d(on)
r
d(off)
f
iss
oss
o(er)
o(tr)
Min.
600
2.5
-
-
-
-
-
-
Min.
-
-
-
-
-
-
-
-
6
Typ.
-
3
-
10
-
0.25
0.66
7
Values
Typ.
950
60
40
183
11
9
71
9
Values
C
C
600V CoolMOS™ E6 Power Transistor
oss
oss
while V
while V
Max.
-
3.5
1
-
100
0.28
-
-
Max.
-
-
-
-
-
-
-
-
DS
DS
is rising from 0 to 80% V
is rising from 0 to 80% V
Unit
V
µA
nA
Unit
pF
ns
Note / Test Condition
V
V
V
T
V
T
V
V
T
V
T
f
Electrical characteristics
=1 MHz, open drain
j
j
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=
=600 V,
=600 V,
=0 V,
=20 V,
=10 V,
=10 V,
Note /
Test Condition
V
f
V
V
I
V
V
V
R
(see table 20)
V
=1 MHz
D
Rev. 2.0, 2010-04-09
GS
GS
DS
DS
DD
GS
G
GS
=constant,
= 3.4
=0...480 V
=0...480V
=0 V,
=0 V,
=400 V,
=13 V,
,
I
IPx60R280E6
I
D
D
V
I
I
(BR)DSS
=0.25 mA
D
D
=0.43 mA
V
V
(BR)DSS
DS
=6.5 A,
=6.5 A,
GS
GS
V
=0 V
I
DS
=0 V,
=0 V,
D
V
=6.5 A,
=100 V,
GS
=0 V