IPA60R380E6 Infineon Technologies, IPA60R380E6 Datasheet - Page 8
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IPA60R380E6
Manufacturer Part Number
IPA60R380E6
Description
MOSFET N-CH 600V 10.6A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA60R380E6.pdf
(16 pages)
Specifications of IPA60R380E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10.6A
Vgs(th) (max) @ Id
3.5V @ 320µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 100V
Power - Max
31W
Mounting Type
*
Package / Case
*
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
380.0 mOhm
Id(max) @ Tc=25°c
10.6 A
Idpuls (max)
30.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R380E6
Manufacturer:
Infineon
Quantity:
450
Part Number:
IPA60R380E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPA60R380E6XKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
5
FinalData Sheet
Table 9
Table 10
Z
Power dissipation
TO-220
P
Max. transient thermal impedance
TO-220
(thJC)
tot
= f(
=f(tp); parameter: D=t
T
C
)
Electrical characteristics diagrams
p
/T
8
Power dissipation
TO-220 FullPAK
Z
P
Max. transient thermal impedance
TO-220 FullPAK
(thJC)
tot
= f(
=f(tp); parameter: D=t
600V CoolMOS™ E6 Power Transistor
T
C
)
Electrical characteristics diagrams
p
/T
Rev. 2.0, 2010-04-09
IPx60R380E6