IPD65R600E6 Infineon Technologies
![MOSFET N-CH 600V 7.3A TO252](/photos/16/8/160885/to252_sml.jpg)
IPD65R600E6
Manufacturer Part Number
IPD65R600E6
Description
MOSFET N-CH 600V 7.3A TO252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPD65R600E6
Package / Case
*
Mounting Type
*
Power - Max
63W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
23nC @ 10V
Vgs(th) (max) @ Id
3.5V @ 210µA
Current - Continuous Drain (id) @ 25° C
7.3A
Drain To Source Voltage (vdss)
650V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.1A, 10V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohms
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Power Dissipation
63 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD65R600E6
Manufacturer:
Infineon
Quantity:
2 000
Company:
Part Number:
IPD65R600E6
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPD65R600E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000