IPD60R750E6 Infineon Technologies
![MOSFET N-CH 600V 5.7A TO252](/photos/16/8/160885/to252_sml.jpg)
IPD60R750E6
Manufacturer Part Number
IPD60R750E6
Description
MOSFET N-CH 600V 5.7A TO252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPD60R750E6
Package / Case
*
Mounting Type
*
Power - Max
48W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
17.2nC @ 10V
Vgs(th) (max) @ Id
3.5V @ 170µA
Current - Continuous Drain (id) @ 25° C
5.7A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 2A, 10V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.68 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.7 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD60R750E6
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
IPD60R750E6
Manufacturer:
INFINEON
Quantity:
12 500