NTD4969NT4G ON Semiconductor, NTD4969NT4G Datasheet - Page 4

• Manufacturer Part Number: NTD4969NT4G
• Description: MOSFET N-CH 30V 41A DPAK-4
• Manufacturer: ON Semiconductor

Specifications of NTD4969NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 837pF @ 15V
• Power - Max: 1.38W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19 mOhms
• Forward Transconductance Gfs (max / Min): 36 s
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12.7 A
• Power Dissipation: 1.38 W, 2.56 W, 26.3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.019
0.018
0.017
0.016
0.015
0.013
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.014
0.012
70
60
50
40
30
20
10
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
0
−50
3.0
I
V
D
Figure 3. On−Resistance vs. Gate−to−Source
GS
= 30 A
−25
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
V
= 10 V
DS
4.0
V
1
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, GATE−TO−SOURCE VOLTAGE (V)
0
10 V thru 4.5 V
, JUNCTION TEMPERATURE (°C)
5.0
25
2
Temperature
T
J
6.0
50
= 25°C
Voltage
75
7.0
3
TYPICAL PERFORMANCE CURVES
100
8.0
V
125
4
GS
I
T
D
= 4.2 V
J
9.0
http://onsemi.com
= 30 A
3.8 V
3.4 V
2.6 V
= 25°C
3.0 V
150
5
175
10.0
4
10000
1000
100
20
19
18
17
16
15
14
13
12
11
10
70
60
50
40
30
20
10
10
9
8
7
6
5
4
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
DS
= 10 V
V
V
20
Figure 2. Transfer Characteristics
T
DS
GS
10
J
, DRAIN−TO−SOURCE VOLTAGE (V)
= 125°C
, GATE−TO−SOURCE VOLTAGE (V)
2
T
I
D
J
V
, DRAIN CURRENT (A)
= 25°C
30
GS
Gate Voltage
15
vs. Voltage
= 4.5 V
T
V
T
T
J
J
GS
J
= 125°C
= 150°C
= 85°C
T
= 10 V
40
3
J
= −55°C
20
T
J
50
= 25°C
4
25
V
GS
60
= 0 V
30
70
5