NTD4969NT4G ON Semiconductor, NTD4969NT4G Datasheet

NTD4969NT4G

Manufacturer Part Number

NTD4969NT4G

Description

MOSFET N-CH 30V 41A DPAK-4

Manufacturer

ON Semiconductor

Datasheet

1.NTD4969N-1G.pdf (7 pages)

Specifications of NTD4969NT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

9 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

9.4A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

9nC @ 4.5V

Input Capacitance (ciss) @ Vds

837pF @ 15V

Power - Max

1.38W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

19 mOhms

Forward Transconductance Gfs (max / Min)

36 s

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

12.7 A

Power Dissipation

1.38 W, 2.56 W, 26.3 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Gate Charge Qg

9 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD4969NT4G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTD4969NT4G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 7
Download datasheet (119Kb)

NTD4969N

Power MOSFET

30 V, 41 A, Single N−Channel, DPAK/IPAK

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

April, 2011 − Rev. 1

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current Limited by Package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Three Package Variations for Design Flexibility

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery

DC−DC Converters

qJA

qJC

= 19 A

(Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 0.1 mH, R

= 25°C, V

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 24 V, V

= 25 W)

= 25°C unless otherwise stated)

= 100°C

= 25°C

= 10 V,

Symbol

DmaxPkg

dV/dt

EAS

STG

DSS

−55 to

Value

+175

12.7

2.56

1.38

26.3

±20

150

260

9.0

9.4

6.6

6.0

V/ns

Unit

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

CASE 369AA

1 2

(Bent Lead)

STYLE 2

Drain

Drain 3

(BR)DSS

30 V

DPAK

Source

ORDERING INFORMATION

4969N = Device Code

MARKING DIAGRAMS

& PIN ASSIGNMENTS

N−CHANNEL MOSFET

http://onsemi.com

Gate

(Straight Lead)

9.0 mW @ 10 V

19 mW @ 4.5 V

CASE 369AC

= Year

= Work Week

= Pb−Free Package

DS(ON)

Drain

3 IPAK

2 3

Publication Order Number:

MAX

Source

Gate

(Straight Lead

CASE 369D

NTD4969N/D

Drain

DPAK)

Drain

IPAK

41 A

MAX

Source

Related parts for NTD4969NT4G

NTD4969NT4G Summary of contents

Page 1

NTD4969N Power MOSFET Single N−Channel, DPAK/IPAK Features • Low R to Minimize Conduction Losses DS(on) • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Three Package Variations for Design ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. Surface−mounted on FR4 board using the ...

Page 3

... Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils. ORDERING INFORMATION Device NTD4969NT4G NTD4969N−1G NTD4969N−35G IPAK Trimmed Lead †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 4

V thru 4 25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.019 0.018 0.017 0.016 0.015 0.014 0.013 0.012 0.011 ...

Page 5

C 900 iss 800 700 600 500 C 400 oss 300 200 C 100 rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

Related keywords

NTD4969NT4G datasheet
NTD4969NT4G data sheet
NTD4969NT4G pdf datasheet
NTD4969NT4G component
NTD4969NT4G part
NTD4969NT4G distributor
NTD4969NT4G RoHS
NTD4969NT4G datasheet download