NTMFS5844NLT1G ON Semiconductor, NTMFS5844NLT1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS5844NLT1G
• Description: MOSFET N-CH 60V 60A SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS5844NLT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 16 mOhms
• Forward Transconductance Gfs (max / Min): 27 s
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 60 A
• Power Dissipation: 1.9 W, 3 W, 57 W, 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1800
1600
1400
1200
1000
1000
1000
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
V
I
V
C
D
R
Thermal Limit
Package Limit
V
Single Pulse
T
Figure 9. Resistive Switching Time Variation
DD
GS
Figure 11. Maximum Rated Forward Biased
rss
C
= 10 A
GS
DS(on)
C
= 25°C
= 48 V
= 4.5 V
t
= 10 V
oss
r
10
Figure 7. Capacitance Variation
Limit
DRAIN−TO−SOURCE VOLTAGE (V)
R
t
V
f
G
DS
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
20
, DRAISN VOLTAGE (V)
1
C
30
10
iss
1 ms
100 ms
10
40
t
d(on)
TYPICAL CHARACTERISTICS
10 ms
V
T
t
10 ms
J
GS
d(off)
50
= 25°C
dc
http://onsemi.com
= 0 V
100
60
100
4
10
40
30
20
10
50
40
30
20
10
8
6
4
2
0
0
0
0.5
0
25
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 8. Gate−to−Source Voltage vs. Total
J
GS
Figure 12. Maximum Avalanche Energy vs.
gs
T
= 25°C
J
= 0 V
, STARTING JUNCTION TEMPERATURE (°C)
V
SD
5
Starting Junction Temperature
0.6
50
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Q
g
gd
, TOTAL GATE CHARGE (nC)
10
0.7
75
Charge
Q
T
15
0.8
100
20
V
T
I
DS
D
0.9
125
J
= 10 A
= 25°C
25
= 48 V
150
1.0
30